Polyfet RF Devices designs and manufactures RF power transistors and power amplifier modules for commercial, industrial, and defense systems. Its catalog spans three semiconductor technologies: VDMOS, LDMOS, and GaN. Across the portfolio, devices reach frequencies up to 3 GHz, output power up to 2 kW, and operate at voltages up to 50 VDC.
The three technologies occupy different parts of the design space. VDMOS remains a practical choice at HF through VHF, where its ruggedness and linearity suit broadcast, industrial heating, and lower-frequency communications. LDMOS offers high gain and efficiency from VHF through the lower microwave range and is widely used in communications infrastructure and broadband amplifiers. GaN extends usable power density and frequency further, supporting higher-voltage operation and the wide bandwidths increasingly required in radar and electronic warfare. Offering all three lets Polyfet match the device to the band and power level required by the designer and the application.
Within the module range, the MCCQ04 and MSCQ02 are internally matched RF power amplifier modules built around LDMOS transistors. Internal matching places the input and output matching networks inside the package, so the module presents a defined impedance to the system and reduces the external tuning a designer would otherwise have to develop. Operated at 28 VDC, the two modules form a cascaded chain that delivers 175 W of saturated output power (Psat) across the 30 to 512 MHz band with 47 dB of gain. That span covers the VHF and UHF range used in tactical and broadband communications, while the gain figure reflects the two stages working in sequence, the first providing drive for the second.
The MCCQ04 contains Polyfet’s LP801 and LQ801 transistors, while the MSCQ02 contains the LR2401. Pairing them in a chain allows a low-level input signal to reach the full 175 W output without additional external gain stages, simplifying the surrounding circuit and shortening development time.
A broadband amplifier that provides useful gain and power from 30 to 512 MHz suits applications that must operate across multiple bands without retuning, including software-defined radios, EW, and general-purpose test equipment. By supplying the matching and the cascaded gain as an integrated module rather than a set of discrete transistors, Polyfet shifts part of the amplifier design effort from the customer to the device, an advantage where schedule or board area is constrained. For designers already working with the company’s discrete VDMOS, LDMOS, and GaN transistors, the modules extend the same device base to a higher level of integration.
Portfolio at a Glance
- Broadband RF power modules — GaN, VDMOS, and LDMOS. 24 to 48 VDC, up to 1260 MHz, and 350 W. Various case sizes and RF connectors. Custom design requests welcomed.
- GaN — 28 and 48 VDC, up to 3 GHz, up to 160 W, single-ended or push-pull.
- LDMOS — 5 to 50 VDC, up to 2.7 GHz and up to 2 kW, single-ended or push-pull.
- VDMOS — 12.5 to 50 VDC, up to 1 GHz and 400 W, single-ended or push-pull.